| 摘要 |
In a method for determining a logic state of a memory cell in a data storage device, wherein the cell stores data in the form of an electrical polarization state in a capacitor containing a polarizable material, a time-dependent small-signal voltage is applied over the capacitor, and at least one component of a generated small-signal current response is recorded. This component shall have either a linear or non-linear relationship to the small-signal voltage, such that logic state can be determined by temporal correlation between the small-signal voltage and a recorded component. According to a first embodiment, an apparatus for performing a phase comparison in the above method comprises a phase-sensitive detector and discriminator, connected with a memory cell for receiving a response signal therefrom and with a signal generator for receiving the read signal input to the memory cell, applying the read signal as a reference in the phase sensitive detector and discriminator for determining a logic state of the memory cell.
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