| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a pixel structure which has a pixel electrode, a scanning line (gate line), and a data line adequately arranged at a pixel and has a high aperture rate without increasing the number of masks nor the number of processes, and to provide technology which improves characteristics of a TFT and actualizes the best structure of the TFT for driving conditions of the pixel and a driving circuit by using a small number of photomasks. SOLUTION: A device has a 1st insulating film and a 2nd insulating film formed between a 1st electrode and a semiconductor film and a 3rd insulating film formed between a semiconductor film, and a 2nd electrode; and the semiconductor film is formed on a flat surface of the 2nd insulating film, and the 1st and 2nd electrodes form intersection parts with the semiconductor film at the same opposite positions and connected outside the intersection parts through openings formed in the 1st and 2nd insulating films.</p> |
