Organic field effect transistor used in the production of integrated circuits comprises a gate electrode, an insulating layer and a semiconductor layer arranged on a substrate

摘要

Organic field effect transistor comprises a gate electrode (2), an insulating layer (3') and a semiconductor layer (6) arranged on a substrate (1). Source and drain electrodes are embedded in the insulating layer. An Independent claim is also included for a process for the production of an organic field effect transistor.