发明名称 Converting volatile memory to non-volatile memory
摘要 The invention relates to a method for converting volatile memory cells to non-volatile memory cells with minimal modifications. There is included a volatile memory cell which is modified to permanently retain data by using one refresh port to transmit an active low voltage signal and configuring one terminal of the storage transistor to receive either an active high or low voltage signal.
申请公布号 US2002186580(A1) 申请公布日期 2002.12.12
申请号 US20020117665 申请日期 2002.04.04
申请人 INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT 发明人 JAIN RAJ KUMAR
分类号 G11C11/405;G11C11/406;G11C14/00;(IPC1-7):G11C11/00 主分类号 G11C11/405
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