发明名称 VERTICAL CAVITY SURFACE EMITTING LASER
摘要 PURPOSE: A vertical cavity surface emitting laser is provided to oscillate overpoweringly a single transverse mode by using a feedback member for feeding back a laser beam outputted to the outside of a resonator. CONSTITUTION: A substrate(100) is formed with a chemical semiconductor material. A lower DBR(Distributed Bragg Reflector)(110) and an upper DBR(140) are used for forming a resonator for inducing and amplifying a beam from an active layer(120). The lower DBR(110) is doped by the same type dopant as the substrate(100). The upper DBR(140) is doped by the opposite type dopant to the lower DBR(110). The upper DBR(140) and the lower DBR(110) are formed by laminating the chemical semiconductor materials of different refractive indexes. The refractive index of the lower DBR(110) is higher than the refractive index of the upper DBR(140). The upper DBR(140) and the lower DBR(110) are used for inducing the flow of electrons and positive holes by the current applied from an upper and a lower electrode(160,170). A current limit layer(130) is formed on the active layer(120).
申请公布号 KR20020092186(A) 申请公布日期 2002.12.11
申请号 KR20020027597 申请日期 2002.05.18
申请人 JEON, HEON SU 发明人 JEON, HEON SU
分类号 H01S5/18;(IPC1-7):H01S5/18 主分类号 H01S5/18
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