发明名称 |
CIRCUIT FOR GENERATING INTERNAL SUPPLY VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A circuit for generating an internal supply voltage in a semiconductor memory device is provided to stabilize an internal supply voltage by preventing a supply power level from being lowered under a high temperature. CONSTITUTION: An external reference voltage generation portion(40) generates a predetermined external reference voltage(VREF) according to an external voltage applied from the outside. An internal reference voltage generation portion(50) generates a predetermined internal reference voltage(VREFi) according to the predetermined external reference voltage(VREF) of the external reference voltage generation portion(40). A temperature compensation portion(60) compensates a level of the internal reference voltage(VREFi) of a predetermined level generated from the internal reference voltage generation portion(50) and outputs the compensated internal reference voltage level. An internal supply voltage driver portion(70) generates an internal supply voltage according to the compensated internal reference voltage.
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申请公布号 |
KR20020091958(A) |
申请公布日期 |
2002.12.11 |
申请号 |
KR20010030783 |
申请日期 |
2001.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, U YEONG;OH, HYEONG ROK |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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