发明名称 |
Semiconductor device having an improved plug structure and method of manufacturing the same |
摘要 |
A conductive plug is formed in an interlayer insulation film and on an isolating layer which isolates semiconductor elements on a semiconductor substrate. The conductive plug electrically connects a pair of active regions of the semiconductor elements formed on the different sides of the isolating layer. Alternatively, a conductive plug is formed in an interlayer insulation film and on a conducive line formed on an isolating layer which isolates semiconductor elements on a semiconductor substrate. The conductive plug electrically connects the conductive line and an active region of the semiconductor element.
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申请公布号 |
US6492674(B1) |
申请公布日期 |
2002.12.10 |
申请号 |
US20000584690 |
申请日期 |
2000.06.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOMORI SHIGEKI |
分类号 |
H01L23/522;H01L21/768;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L31/119 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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