发明名称 Semiconductor device having an improved plug structure and method of manufacturing the same
摘要 A conductive plug is formed in an interlayer insulation film and on an isolating layer which isolates semiconductor elements on a semiconductor substrate. The conductive plug electrically connects a pair of active regions of the semiconductor elements formed on the different sides of the isolating layer. Alternatively, a conductive plug is formed in an interlayer insulation film and on a conducive line formed on an isolating layer which isolates semiconductor elements on a semiconductor substrate. The conductive plug electrically connects the conductive line and an active region of the semiconductor element.
申请公布号 US6492674(B1) 申请公布日期 2002.12.10
申请号 US20000584690 申请日期 2000.06.01
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KOMORI SHIGEKI
分类号 H01L23/522;H01L21/768;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L31/119 主分类号 H01L23/522
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