发明名称 |
POWER SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which is improved so as to enable enhancement of reliability. SOLUTION: Metal plates 6 are fixed to both surfaces of an insulation member 2. A power semiconductor element 1 is provided on one surface of the member 2 via the metal plate 6. A heat sink plate 4 is connected to other surface of the member 2 via the plate 6 by a solder layer 5. A refrigerant passage 12 for passing a refrigerant for cooling is provided in the plate 4. A width of the passage 12 is wider than that of the passage 12 at other part near an end of the layer 5. |
申请公布号 |
JP2002353405(A) |
申请公布日期 |
2002.12.06 |
申请号 |
JP20010156434 |
申请日期 |
2001.05.25 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KAMIGAI YASUMI;NAKAJIMA YASUSHI;FUKADA MASAKAZU;NISHIBORI HIROSHI |
分类号 |
H01L23/473;H01L25/07;H01L25/18;(IPC1-7):H01L25/07 |
主分类号 |
H01L23/473 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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