发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor device which is improved so as to enable enhancement of reliability. SOLUTION: Metal plates 6 are fixed to both surfaces of an insulation member 2. A power semiconductor element 1 is provided on one surface of the member 2 via the metal plate 6. A heat sink plate 4 is connected to other surface of the member 2 via the plate 6 by a solder layer 5. A refrigerant passage 12 for passing a refrigerant for cooling is provided in the plate 4. A width of the passage 12 is wider than that of the passage 12 at other part near an end of the layer 5.
申请公布号 JP2002353405(A) 申请公布日期 2002.12.06
申请号 JP20010156434 申请日期 2001.05.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAMIGAI YASUMI;NAKAJIMA YASUSHI;FUKADA MASAKAZU;NISHIBORI HIROSHI
分类号 H01L23/473;H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L23/473
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