| 摘要 |
PROBLEM TO BE SOLVED: To enable the rationalization of a method for manufacturing a semiconductor device that has capacitance comprising a gate electrode whose resistance can be made low and an upper electrode and a lower electrode that are made of the same material. SOLUTION: An element isolation film 2 and a gate insulating film 3 are formed on a semiconductor substrate 1, and a poly-silicon film, a capacitance insulating film forming film, and a poly-silicon film are formed on the entire surface. Next, the upper electrode 6 and the capacitance insulating film 5 are formed by patterning the poly-silicon film on the element isolation film 2 and the capacitance insulating film forming film using a photo resist film as a mask. Next, a tungsten silicide film is formed on the entire surface, and by remaining the tungsten silicide film only at a transistor forming region using the photo resist film as the mask and by patterning the taungsten silicide film and the poly-silicon film using the photo resist film as the mask the gate electrode 11 having a tungsten polycide structure is formed on the transistor forming region and the lower electrode 4 is formed on the element isolation film 2.
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