发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor thin film which can prevent a contamination of an interface. SOLUTION: An ozone water washing 14 is performed immediately after an amorphous silicon 13 is deposited on a glass substrate 11 to compulsorily form an oxide film 15 on the surface of the amorphous silicon film 13 so that the contamination of the amorphous silicon film 13 is prevented.
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申请公布号 |
JP2002353241(A) |
申请公布日期 |
2002.12.06 |
申请号 |
JP20010157675 |
申请日期 |
2001.05.25 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SOMA KOJI;YOSHIOKA TATSUO |
分类号 |
H01L21/205;H01L21/20;H01L21/304;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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