发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor thin film which can prevent a contamination of an interface. SOLUTION: An ozone water washing 14 is performed immediately after an amorphous silicon 13 is deposited on a glass substrate 11 to compulsorily form an oxide film 15 on the surface of the amorphous silicon film 13 so that the contamination of the amorphous silicon film 13 is prevented.
申请公布号 JP2002353241(A) 申请公布日期 2002.12.06
申请号 JP20010157675 申请日期 2001.05.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SOMA KOJI;YOSHIOKA TATSUO
分类号 H01L21/205;H01L21/20;H01L21/304;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/205
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