| 摘要 |
PROBLEM TO BE SOLVED: To surely obtain a nitride semiconductor substrate which is low in defect density and superior in productivity, without producing cracks, etc., SOLUTION: First, on a material on which nitride semiconductor does not substantially grow, a mask film 12B, having a plurality of opening parts 12a opened in a stripe-like, is formed on a main surface of a base material substrate 11. Next, a semiconductor layer 13, composed of a nitride via the mask film 12B, is selectively grown on the base material substrate 11. Next, laser beams are irradiated on an interface relative to the base material 11 in the semiconductor layer 13 and the semiconductor layer 13 is separated from the base material 11, thereby forming a nitride semiconductor substrate 13A from the semiconductor layer 13.
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