| 摘要 |
A method for forming a contact window with low resistance. The method at least includes the following steps. First of all, a dielectric layer is formed over a substrate, in which the substrate having a contact region where the metal contact will be formed thereon. Then, a first barrier layer is deposited over the dielectric layer, and a patterned photoresist is formed to defined a contact hole. Next, the first barrier layer and the dielectric layer are etched to expose portion of the substrate by using the photoresist as a mask thereby a contact hole is formed in the dielectric layer, wherein the exposed substrate has a conductive region. Then, a second conformal barrier layer is deposited on the first barrier layer and in the contact hole, the second conformal barrier layer is etched to exposed the conductive region to form a spacer on sidewalls of in the contact hole. Finally, the contact region opening is filled with a metal layer to complete electrical connections.
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