| 摘要 |
The invention concerns the field of treatments, by energy intake, of thin deposited layers of hydrogenated amorphous silicon to modify a selected physico-chemical property of the layers. The invention is characterised in that it consists in illuminating the layers with a light source emitting a radiation of wavelength included in an optical absorption band of the amorphous silicon, and capable of delivering at least a treating pulse, lasting between 50 ns and 500 ns, thereby enabling the raise the electronic mobility ( mu ) of the thin layer by a factor ranging between 1.5 and 10. |
