| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming films by which the microloading of the film forming speed can be sufficiently improved while suppressing the decrease in the film forming speed when a film containing atoms of nitrogen is formed on a substrate by a CVD method. SOLUTION: The film forming method is a thermal CVD method by which a silicon nitride film is formed on a silicon wafer W. The silicon wafer W is placed on a susceptor 5 in a chamber 2, and NH3 gas and SiH4 gas are supplied into the chamber 2 at a specified flow rate from a gas supplying part 30 while the chamber 2 is depressurized. In this case, the supply and exhaust of the gases is controlled by a controller 80, MfC 31a, 32a and the like in such a way that the retention time of the gases on the silicon wafer W is 8-17 sec, for example. In this way, the generation of Si i-mer on the silicon wafer W is suppressed and the rate controllability of deposition reaction is increased.
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