| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate heater and a semiconductor manufacturing apparatus, where the heat energy given to the stage of the substrate heater can be reduced. SOLUTION: In a processing chamber 2 of a sputtering apparatus 1, the substrate heater 5 is provided. The substrate heater 5 has a stage 6, and a heating plate 8 is provided above the stage 6 via two insulation plates 7a, 7b as for holding a wafer W on the heating plate 8. In the stage 6, a cooling passage 10 for passage of cooling water therethrough is formed. Since the insulation plates 7a, 7b are provided in a laminated state between the stage 6 and the heating plate 8, the heat radiated from the heating plate 8 is reduced gradually in the insulation plates 7b, 7a.</p> |
