发明名称 METHOD FOR MANUFACTURING SAMPLE FOR OBSERVING CRYSTAL DEFECT IN SILICON CRYSTAL AND THIN PIECE SAMPLE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a sample which can form at once a large quantity of thin piece samples for a crystal defect observing transmission electron microscope in the silicon crystal and which can be simply manufactured in a wide area and to provide the thin piece sample. SOLUTION: The method for manufacturing the sample to observe the defect in the silicon crystal by the transmission electron microscope comprises the steps of releasing only a shallow region on the surface of the crystal, and thinning the region to the thin piece samples.
申请公布号 JP2002343841(A) 申请公布日期 2002.11.29
申请号 JP20010146943 申请日期 2001.05.16
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 KATO MASAHIRO;YOKOGAWA ISAO
分类号 G01N1/28;H01J37/20;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N1/28
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