| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the reduction of on- resistance and restraint of characteristic deterioration which is caused by hot carriers are realized. SOLUTION: A shield conducting film 10 which is electrically connected with a source electrode 12 is arranged between a gate electrode 3 and a drain electrode 13 of an FET. In a drain offset layer 8, two kinds of n-type semiconductors are subjected to double ion implantation, and the layer 8 has a double layer structure constituted of an n-type semiconductor region 8bb in which ions are implanted shallowly and an n-type semiconductor region 8aa in which ions are implanted deeply. The n-type semiconductor region 8bb of the drain offset layer in a gate electrode end, wherein ions are implanted shallowly, is formed being shifted to the drain side, and an LDD wherein the concentration of impurity is low is arranged on a gate end side of the drain offset layer. As a result, the on-resistance is reduced and output power can be improved while the reliability of a high frequency power MOSFET is ensured.</p> |
