METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a cleaning technology for reducing adhesion of impurities to a silicon layer in a technology for fabricating a semiconductor device having an integrated circuit of thin film transistor formed on a substrate. SOLUTION: A process for forming a clean oxide film after forming an amorphous silicon film without forming a native oxide on the surface thereof and completing crystallization of silicon is employed. Consequently, impurities adhering to the amorphous silicon layer is reduced as compared with a process where a native oxide film is formed. Furthermore, shift of the Vth of a TFT can be suppressed because impurities adhering to the amorphous silicon layer is reduced.