发明名称 |
SEMICONDUCTOR DEVICE HAVING A SHALLOW JUNCTION AND A FABRICATION PROCESS THEREOF |
摘要 |
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.
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申请公布号 |
US2002177289(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US19990472829 |
申请日期 |
1999.12.28 |
申请人 |
KASE MASATAKA;MIYAKE TOSHIKI;HORI MITSUAKI;HIKAZUTANI KENICHI;NAKAMURA MANABU;WADA TAKAYUKI;KATAOKA YOSHIKAZU |
发明人 |
KASE MASATAKA;MIYAKE TOSHIKI;HORI MITSUAKI;HIKAZUTANI KENICHI;NAKAMURA MANABU;WADA TAKAYUKI;KATAOKA YOSHIKAZU |
分类号 |
H01L29/78;H01L21/265;H01L21/324;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/425 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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