发明名称 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface
摘要 A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
申请公布号 US6483083(B2) 申请公布日期 2002.11.19
申请号 US20010877147 申请日期 2001.06.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKURAI HIDEAKI;KUMAGAE AKITOSHI;HIGASHIKAWA IWAO;ITO SHINICHI;ARIKADO TSUNETOSHI;OKUMURA KATSUYA
分类号 G03F7/38;G01J5/00;G01J5/06;G05D23/27;H01L21/027;(IPC1-7):F27D11/00 主分类号 G03F7/38
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