发明名称 SEMICONDUCTOR CRYSTAL, METHOD OF GROWTH, AND PHOTOSEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a ZnO based crystal excellent in optical properties. SOLUTION: The method of growing semiconductor crystal of group II-V element on a substrate is comprised of following steps: (a) a step for preprocessing the substrate; (b) a step for growing a semiconductor crystal of group II-VI element on the surface of the substrate on a polar surface of group II element.
申请公布号 JP2002326895(A) 申请公布日期 2002.11.12
申请号 JP20010133897 申请日期 2001.05.01
申请人 STANLEY ELECTRIC CO LTD;YAO TAKAFUMI 发明人 SANO MICHIHIRO;YAO TAKAFUMI
分类号 C30B29/16;H01L21/365;H01L33/06;H01L33/28;H01S5/327 主分类号 C30B29/16
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