发明名称 |
SEMICONDUCTOR CRYSTAL, METHOD OF GROWTH, AND PHOTOSEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a ZnO based crystal excellent in optical properties. SOLUTION: The method of growing semiconductor crystal of group II-V element on a substrate is comprised of following steps: (a) a step for preprocessing the substrate; (b) a step for growing a semiconductor crystal of group II-VI element on the surface of the substrate on a polar surface of group II element. |
申请公布号 |
JP2002326895(A) |
申请公布日期 |
2002.11.12 |
申请号 |
JP20010133897 |
申请日期 |
2001.05.01 |
申请人 |
STANLEY ELECTRIC CO LTD;YAO TAKAFUMI |
发明人 |
SANO MICHIHIRO;YAO TAKAFUMI |
分类号 |
C30B29/16;H01L21/365;H01L33/06;H01L33/28;H01S5/327 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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