发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To resolve a problem where an external in-rush current occurring outside a semiconductor device flows into the semiconductor device through a lead, which causes a semiconductor element to be damaged, because a conductive member exposed outside a resin sealing body is only an external connecting lead in a conventional semiconductor device and its manufacturing method. SOLUTION: The semiconductor device 21 of the present invention has a structure that a point 25 of a second lead 26 is exposed at a surface of the resin sealing body 23. In addition, the second lead 26 has the structure to be grounded via the first lead 31. As a result, the external in-rush current occurring outside the semiconductor device 21 can be taken in from the second lead 26, and thus the semiconductor device and its manufacturing method capable of protecting the semiconductor element can be provided.</p>
申请公布号 JP2002324889(A) 申请公布日期 2002.11.08
申请号 JP20010129561 申请日期 2001.04.26
申请人 SANYO ELECTRIC CO LTD 发明人 TSUBONOYA MAKOTO;SEKIGUCHI HIROBUMI
分类号 B23K26/00;B23K101/40;H01L21/56;H01L23/28;H01L23/50;(IPC1-7):H01L23/50 主分类号 B23K26/00
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