| 摘要 |
PROBLEM TO BE SOLVED: To improve the productivity of a module which stores a light emitting source by using a surface light emitting semiconductor laser element which can lessen an operating voltage, an oscillation threshold current, etc., as the light emitting source. SOLUTION: On an n-GaAs substrate 2, an n-semiconductor distribution Bragg reflector 3 is formed and on it, an n-Gax In1-x Py As1-y layer 11 with a thicknessλ/4 is laminated. On the layer 11, an undoped lower GaAs spacer layer 4, a multi-quantum well active layer composed of three active layers (quantum well active layer) 12 as Gax In1-x As quantum well layers and GaAs barrier layers (20 nm) 13, and an undoped upper GaAs spacer layer 4 are laminated to form a resonator which has a thicknessλof one oscillation wavelengthλin a medium. The length of an optical fiber cable which is led out of a module package which stores the surface light emitting laser element chip is made longer than a certain length.
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