发明名称 |
Method for operation of an eeprom array, including refresh therefor |
摘要 |
A method for operating an electrically erasable programmable read only memory (EEPROM) array, the method including refreshing a threshold voltage of a bit of a memory cell in an EEPROM array, the threshold voltage being different than a previous threshold voltage, by restoring the threshold voltage of the bit at least partially back to the previous threshold voltage. <IMAGE> |
申请公布号 |
EP1253599(A1) |
申请公布日期 |
2002.10.30 |
申请号 |
EP20020253004 |
申请日期 |
2002.04.24 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
MAAYAN, EDUARDO;ELIYAHU, RON;EISEN, SHAI;EITAN, BOAZ |
分类号 |
G11C16/02;G11C16/04;G11C16/34 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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