The present invention relates to the preparation of an x-ray photomask by exposing a free-standing film of a radiation sensitive metal/chalcogenide to an electron beam scanned in a defined pattern so as to generate areas in the film of reduced metal content in accordance with the defined pattern, as well as novel x-ray photomasks.
申请公布号
WO02084400(A2)
申请公布日期
2002.10.24
申请号
WO2002GB01722
申请日期
2002.04.11
申请人
THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEE;FITZGERALD, ALEXANDER, GRANT;MIETZSCH, KATRIN
