发明名称 Manufacturing method of semiconductor integrated circuit device, and semiconductor integrated circuit device
摘要 When a through hole 17 is transferred on a pair of contact holes 10 putting a data line DL therebetween, even if a pair of through holes 17 putting the data line DL therebetween are deviated, the pair of through holes are connected to the contact hole 10b and not connected to the data line DL. By this manner, a mask pattern formed by a photomask is use so as to be deviated and disposed in a direction separately from the data line DL at a design stage. This results in improvement of an alignment tolerance of the pattern.
申请公布号 US2002155656(A1) 申请公布日期 2002.10.24
申请号 US20020142063 申请日期 2002.05.10
申请人 HAYANO KATSUYA;IMAI AKIRA;HASEGAWA NORIO 发明人 HAYANO KATSUYA;IMAI AKIRA;HASEGAWA NORIO
分类号 G03F1/08;G03F1/00;G03F1/14;G03F1/30;G03F1/32;G03F1/68;H01L21/027;H01L21/60;H01L21/8242;H01L27/108;H01L27/115;(IPC1-7):H01L21/00;H01L21/823;H01L21/824 主分类号 G03F1/08
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