Preparation method of semiconductor device

摘要

A preparation method of a semiconductor device comprising a substrate having formed thereon plural semiconductor elements formed in a matrix form and plural pixel electrodes each connected to each semiconductor element and a liquid crystal layer held on the substrate, comprisinga step of forming the plural pixel electrodes on an interlayer dielectric,a step of heat-treating the plural electrodes to form hillocks and whiskers on the surfaces of the electrodes, anda step of removing the hillocks and the whiskers to flatten the electrode surfaces.The semiconductor device is suitably used for, for example, a reflection type LCD apparatus with pixel electrodes having a good light reflectance and a high anti-brittleness.