| 摘要 |
A system and method are disclosed for providing in-situ monitoring of thin film thickness (102, 122158), such as by employing a non-destructive optical measurement technique. The monitored film thickness (102, 122, 158) may be employed to help achieve a desired feature film thickness (102, 122, 158) and uniformity across a surface of a substrate (48, 104, 124, 156). By monitoring film thickness (102, 122, 158) during semiconductor processing, for example, one or more process control parameters may be adjusted to help achieve a desired film thickness (102, 122, 158) and/or uniformity thereof. |
