发明名称 |
Novel bi-layer lift-off process for high track density GMR head |
摘要 |
A method for forming a bi-layer lift-off mask for use in fabricating an abutted junction type GMR read-head sensor with a narrow trackwidth of less than 0.5 microns. The mask has a novel suspension bridge structure that avoids problems associated with bi-layer lift-off masks of the prior art, namely insufficient or excessive undercutting of the lower layer that produces fence formations in the conducting lead layer or collapse of the mask structure rendering removal difficult.
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申请公布号 |
US2002148105(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20010835023 |
申请日期 |
2001.04.16 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
HAN CHERNG-CHYI;LEE RODNEY;CHEN MAO-MIN;WANG POKANG |
分类号 |
G11B5/31;G11B5/39;H01L43/08;H01L43/12;(IPC1-7):H04R31/00;H04R31/00;G11B5/127 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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