Light Emitting Device

摘要

A light-emitting device for example a GaN based III-V nitride device and a method for fabricating the same are provided. The light-emitting device includes first (50) and second (64) electrodes arranged facing opposite directions or the same direction with a high-resistant substrate (60) therebetween. Material layers (54, 56, 58) are or light emission or lasing. The second electrode directly contacts a region of the outmost material layer (58) exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate (60) to cover the exposed region of the outmost material layer.