| 发明名称 |
Oxygen doping method for a gallium nitride single crystal substrate |
| 摘要 |
<p>A non-C-plane gallium nitride single crystal wafer is prepared and is supplied with material gases including gallium, nitrogen and oxygen. A bulk gallium nitride crystal formed on the gallium nitride crystal wafer in vapor phase, is doped with oxygen through the non-C-plane surface of the bulk crystal. An independent claim is included for oxygen doped n-type gallium nitride free-standing single crystal substrate.</p> |
| 申请公布号 |
EP1249522(A2) |
申请公布日期 |
2002.10.16 |
| 申请号 |
EP20020006925 |
申请日期 |
2002.03.26 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MOTOKI, KENSAKU;UENO, MASAKI |
| 分类号 |
C30B29/40;C23C16/30;C30B23/00;C30B23/02;C30B25/00;C30B25/02;C30B29/38;C30B33/00;H01L21/205;(IPC1-7):C30B29/40 |
主分类号 |
C30B29/40 |
| 代理机构 |
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代理人 |
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