发明名称 |
Semiconductor device |
摘要 |
A small-sized low-power-loss capacitor having low parasitic resistance is obtained by adopting metal wires as wires in a line and space structure to utilize capacitances between adjacent metal wires. A plurality of wires (3) each extending in a direction (x) and composed of metals such as Al and Cu are aligned in a direction (y) at predetermined intervals, forming a line and space structure (4). The line and space structure (4) is formed on a silicon substrate (1). On the silicon substrate (1), an insulation film (2) composed for example of a silicon oxide film is formed to provide electrical isolation between adjacent wires (3).
|
申请公布号 |
US6465832(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000543544 |
申请日期 |
2000.04.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAEDA SHIGENOBU;YAMAMOTO KAZUYA |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L23/522;H01L27/08;H01L27/108;(IPC1-7):H01G4/30;H01L29/00 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|