发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
|
申请公布号 |
US6465284(B2) |
申请公布日期 |
2002.10.15 |
申请号 |
US20010779829 |
申请日期 |
2001.02.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ADACHI HIROKI;TAKENOUCHI AKIRA;FUKADA TAKESHI;UEHARA HIROSHI;TAKEMURA YASUHIKO |
分类号 |
H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/45;H01L29/49;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|