Ic resistor and capacitor fabrication method

摘要

An IC resistor and capacitor fabrication method comprises depositing a dielectric layer (14) over existing active devices and metal interconnections on an IC substrate (10). In a preferred embodiment, a layer of thin film material (16) suitable for the formation of thin film resistors is deposited next, followed by a metal layer (18) that will form the bottom plates of metal-dielectric-metal capacitors. Next, the capacitors' dielectric layer (20) is deposited to a desired thickness to target a particular capacitance value, followed by the deposition of another metal layer (22) that will form the capacitors' top plates. The metal layers, the capacitor dielectric layer, and the thin film material layer are patterned and etched to form TFRs (36) and metal-dielectric-metal capacitors (38) as desired on the IC substrate The method may be practiced using any of several alternative process sequences. For example, the bodies of the TFRs can be formed before the deposition of the capacitors' layers. Also, the capacitors' bottom plates may be patterned and etched prior to doing the same for their top plates.