| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor having a gate stack of a high dielectric constant and proper boundary characteristics. SOLUTION: For a field effect transistor, a conductive oxide is used for a gate electrode 4 and one kind selected from among SiO2, silicate, the boundary reaction layer of a metal oxide or the conductive oxide and Si and the boundary reaction layer of the same and SiO2 is used for a gate insulation layer 3 on a channel, using an Si semiconductor substrate 1. Desirably, the conductive oxide contains at least one kind selected from among alkaline earth or rare earth, such as SuRuO3 or one having a perovskite structure be provided.
|
