| 摘要 |
In some embodiments, the invention involves an electrical system including a die having field effect transistors (FETs), the die having a target acceptable leakage level. A body bias voltage source to apply a voltage Vbb1 to bodies of the FETs to forward body bias the FETs. A temperature reduction system to provide a temperature reduction to the die such that the die is in a temperature range, and wherein when the temperature of the die is in the temperature range and the voltage Vbb1 is applied to the bodies, a leakage of the die is not more than the target acceptable leakage level, but if the temperature reduction system were not operated and the voltage Vbb1 is applied to the bodies, then the leakage would be above the target acceptable leakage level. Other embodiments are described and claimed.
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