| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve a step-coverage of a photoresist layer between a cell and a peripheral regions by using an organic ARC(Anti Reflective Coating). CONSTITUTION: A hard mask is formed on a semiconductor substrate having a cell and a peripheral regions. A plurality of first trenches are formed in the cell region. An organic ARC film is formed on the entire surface of the resultant structure so as to fill the first trenches. A planarized photoresist pattern is formed by using the organic ARC film. Then, second trenches(26) are formed in the peripheral region by using the photoresist pattern. The depth of the first trenches is deeper than that of the second trenches(26).
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