| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-restoration memory in which correction of hard-error can be performed and an additional memory module for a spare memory is not required. SOLUTION: A memory device (300) responding to a command signal has a plurality of banks of a memory array (324). Each of the banks has a plurality of main storage cells (200, 822B-822E) and spare units (206, 822A) of a spare storage cell. A detector (142) detects an error in a unit of a first main storage cell pf a first bank. Controllers (312, 322) maps automatically a unit of a first main storage cell to a unit of a second storage cell again mapping to the command signal without interrupting access for memory data.
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