Manufacturing process for semiconductor device, photomask, and manufacturing apparatus for semiconductor device

摘要

Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor deavice. The manufacturing process, regarding optical distortion of said exposure apparatus as a variation in reduction rate of a transferred pattern in each of regions, includes: a first step transferring a fundamental pattern formed on a reference photomask for measuring the optical distortion to measure a size of a transferred pattern in a corresponding one of regions; and a second step of, based on a result obtained in said first step, forming a corrected photomask having a pattern corrected in said corresponding one of regions with respect to said optical distortion.