| 摘要 |
A conductive structure includes a conductively doped semiconductive material and an overlying WxSiyNz comprising material, where each of "x", "y" and "z" is greater than zero. Insulative material is formed over the WxSiyNz comprising material of the conductive structure. A contact opening is etched through the insulative material and through the WxSiyNz material effective to expose the conductively doped semiconductive material. The contact opening etching includes at least one dry etch, followed by at least one wet etch, followed by at least one dry etch. At least one wet etch occurs before etching the WxSiyNz comprising material. After the contact opening etching, conductive material is formed within the contact opening in electrical connection with the conductively doped semiconductive material. Other aspects are disclosed.
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