发明名称 |
Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method |
摘要 |
A method for performing a cleaning process uses a cleaning gas and high-frequency power upon a film deposition apparatus for depositing a film on a substrate placed in a reactor chamber which can be evacuated to a low pressure. Supplying of high-frequency power is temporarily stopped in the middle of the cleaning process, and the cleaning process is restarted by again supplying high-frequency power. This method is capable of effectively removing by-products from the inside of a reactor chamber and makes it possible to form a high-quality deposition film, in particular, a high-quality electrophotographic photosensitive drum.
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申请公布号 |
US6453913(B2) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010838236 |
申请日期 |
2001.04.20 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KATAGIRI HIROYUKI;SEQI YOSHIO;MATSUOKA HIDEAKI;HITSUISHI KOJI;KARAKI TETSUYA |
分类号 |
C23C16/44;(IPC1-7):B08B6/00 |
主分类号 |
C23C16/44 |
代理机构 |
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地址 |
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