| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method for simply forming a high precision resist position, using a mask and a chemical amplification resist, irrespective of the type of exposure optical sources, the difference in the photosensitive mechanism of resist materials, the shade ratio of the mask, etc. SOLUTION: The method comprises a step for providing an antireflective film 8 and a positive and chemical amplification resist 4 on an Si semiconductor substrate 3, placing a reticle mask 2 having a previously formed mask pattern 1 above the resist 4 to expose, providing a water soluble polymer resin-made protective film 6 for suppressing the movement of an acid substance produced from exposed parts 4a of the resist 4 over the entire surface of the resist 4 regardless of its exposed parts 4a of unexposed parts 4b, then executing PEB in a substantially sealed condition of the acid substance produced in the exposed parts 4a of the resist 4 with the antireflective film 8 and the protective film 6, developing the resist 4 together with the protective film 6, and washing the exposed parts 4a and the protective film 6 away to peel off.
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