| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having a structure of an active layer of an In-containing nitride semiconductor sandwiched between p- and n-type clad layers, especially, a threshold current reducing structure of a device emitting light at a wavelength of 450 nm or higher. SOLUTION: The semiconductor element comprises second nitride semiconductor layers 31 containing no In between an active layer 12 and an n-type clad layer 25 and between a p-type clad layer 30 and the active layer 12 and first In-containing nitride semiconductor layers 32 between the first nitride semiconductor layers and the active layer, and the active layer composed of quantum wells has two well layers. |
