TFT LIQUID CRYSTAL DISPLAY AND ITS FABRICATING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a TFT liquid crystal display and its fabricating method in which the resistance of a semiconductor layer in the source and drain regions of a transistor is prevented from increasing and the semiconductor layer in a contact hole is prevented from being eliminated due to over etching of a polysilicon film at the time of making the contact hole for interconnection by dry etching. SOLUTION: A first semiconductor layer 12 is formed, a first insulation film 14 is formed thereon, and a gate electrode 15 is formed. The first semiconductor layer 12 is then doped with arsenic or boron ions and the gate electrode 15 is covered with a second insulation film 16. Subsequently, the first and second insulation films are opened partially, a second semiconductor layer 17 connected with the first semiconductor layer 12 at the opening is formed and doped with arsenic or boron ions to form an insulated gate (MIS) semiconductor transistor.