| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical integrated device by which an increase in growth speed or change in crystal composition can be suppressed in a layer structure to be formed later adjacent to the boundary of the structure to be formed early, when a plurality of semiconductor layer structures are formed by a butt-joint method. SOLUTION: In this method for manufacturing an optical integrated device by the butt-joint method, a first mask 21 for etching and removing selectively a first semiconductor structure 11 that is formed early is used as a mask pattern of a smaller width L1 that the width L0 of the first layer structure 11. In this case, in a step of growing a second semiconductor layer structure on a substrate in an area where the first layer structure 11 is etched and removed, the diffusion of an excessive material from a first area R1 to a second area R2 is reduced, thus suppressing the growth speed of the layer structure or the change of a crystal composition.</p> |
