发明名称 PLASMA TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treating apparatus having a high utilization efficiency of high frequency power. SOLUTION: A baffle plate 24 is fitted between the ceiling and sidewall defining the chamber 2 of the plasma treating apparatus. The baffle plate 24 has a function for confining a plasma above the chamber 2 and a function as the passage of a current returning back to a high frequency power supply. In the arrangement provided with the baffle plate 24, interface on the return passage is reduced substantially and plasma treatment with a high utilization frequency of high frequency power can be realized.
申请公布号 JP2002270598(A) 申请公布日期 2002.09.20
申请号 JP20010070422 申请日期 2001.03.13
申请人 TOKYO ELECTRON LTD 发明人 AOKI MAKOTO;ABE SHOICHI;YOSHITAKA HIKARI;KATO YOSHIHIRO;ASHIGAKI SHIGEO
分类号 H05H1/46;C23C16/509;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 H05H1/46
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