发明名称 |
PLASMA TREATING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treating apparatus having a high utilization efficiency of high frequency power. SOLUTION: A baffle plate 24 is fitted between the ceiling and sidewall defining the chamber 2 of the plasma treating apparatus. The baffle plate 24 has a function for confining a plasma above the chamber 2 and a function as the passage of a current returning back to a high frequency power supply. In the arrangement provided with the baffle plate 24, interface on the return passage is reduced substantially and plasma treatment with a high utilization frequency of high frequency power can be realized. |
申请公布号 |
JP2002270598(A) |
申请公布日期 |
2002.09.20 |
申请号 |
JP20010070422 |
申请日期 |
2001.03.13 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
AOKI MAKOTO;ABE SHOICHI;YOSHITAKA HIKARI;KATO YOSHIHIRO;ASHIGAKI SHIGEO |
分类号 |
H05H1/46;C23C16/509;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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