| 摘要 |
A method for fabricating a capacitor by using self-aligned etching process is provided. First, a substrate has a plug structure thereon. An inter poly dielectric layer is deposited cover the substrate and plug structure. Next, a photoresist layer is formed on inter poly dielectric layer, wherein the photoresist layer has an opening pattern. Afterward, the inter poly dielectric layer overetch isotropically by using the photoresist layer as a mask to expose a portion of the plug structure such that the dielectric layer has a cup-like shape. The photoresist layer is then removed. A second conducting layer is deposited on the inter poly dielectric layer as a bottom electrode of the capacitor. Then, a dielectric layer is conformal deposited on the second conductive layer. Finally, a third conductive layer, again, is formed along the surface of dielectric layer as a top electrode of capacitor.
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