发明名称 |
Method for producing silicon single crystal |
摘要 |
A method for producing a silicon single crystal, the method being capable of suppressing the dislocation of a single crystal. When a silicon single crystal is produced by a Czochralski method in which a horizontal magnetic field or a cusp magnetic field is applied and the single crystal during growth is dislocated, the single crystal with dislocations is dissolved in a nonmagnetic field condition and thereafter a magnetic field is applied again to pull up the silicon single crystal. The flow rate of argon gas is designed to be 100 L/min or more and the pressure in a furnace is designed to be 6700 pa or less when the single crystal with dislocations is dissolved.
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申请公布号 |
US2002129759(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20010020574 |
申请日期 |
2001.12.18 |
申请人 |
FUJIWARA HIDEKI;NISHIMOTO MANABU;MIYAMOTO ISAMU;MORITA HIROSHI |
发明人 |
FUJIWARA HIDEKI;NISHIMOTO MANABU;MIYAMOTO ISAMU;MORITA HIROSHI |
分类号 |
C30B29/06;C30B15/00;C30B15/30;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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