Method of forming interconnect film

摘要

This invention provides a filming method for covering the surface of the insulating film of a semiconductor substrate with a copper interconnect film free from pores.The surface of the insulating film 2 of a semiconductor substrate 1 is filmed with a copper or copper alloy 3 by any one of plating, CVD and PVD, and the whole body is then heated under a high-pressure gas atmosphere to cover the surface with an interconnect film 4 free from pores.