发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE |
摘要 |
The present invention related to a method of fabricating a semiconductor device which prevents short channel hump due to the moisture in an insulating interlayer. The present invention includes the steps of forming a trench typed field oxide layer defining an active area in a field area of a semiconductor substrate of a first conductive type, forming a gate to the direction of device width wherein a gate oxide layer is inserted between the gate and semiconductor substrate, forming impurity regions in the semiconductor substrate at both sides of the gate by ion implantation with impurities of a second conductive type, forming an insulating interlayer covering the gate on the semiconductor substrate, and removing moisture contained in the insulating interlayer by thermal treatment.
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申请公布号 |
US2002127809(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US19990421090 |
申请日期 |
1999.10.19 |
申请人 |
PARK SUNG-KYE;LEE YOUNG-CHUL |
发明人 |
PARK SUNG-KYE;LEE YOUNG-CHUL |
分类号 |
H01L21/336;H01L21/768;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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